MCH3479-TL-W 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi MCH3479-TL-W
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 900mW
- Total Gate Charge (Qg@Vgs): 2.8nC@4.5V
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 260pF@10V
- Continuous Drain Current (Id): 3.5A
- Gate Threshold Voltage (Vgs(th)@Id): 1.3V@1mA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@10V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@4.5V,1.5A
- Package: SOT-323(SC-70)
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Lead
- Base Part Number: MCH34
- detail: N-Channel 20V 3.5A (Ta) 900mW (Ta) Surface Mount SC-70FL/MCPH3